Solar Energy Materials and Solar Cells, Volume 108, January 2013, Pages 252-255.
Casey M. Clegg, Haeyeon Yang
Nanoscience and Nanoengineering Department, South Dakota School of Mines and Technology, Rapid City, SD 57701, USA
We report the self-assembly of InGaAs quantum dots (QDs) grouped along lines on semiconductor surfaces. Nanoscale spatial thermal modulations were created in-situ on strained-but-flat InGaAs surfaces in a Molecular Beam Epitaxy (MBE) growth chamber by employing interferential irradiations of high power laser pulses. As-irradiated surfaces were examined using an attached ultra-high vacuum Scanning Tunneling Microscope (STM). STM images indicate that the irradiation induces self-assembly of QDs. The average size of laser-induced QDs is smaller while their density is larger than that of QDs formed by the typical Stranski–Krastanov (S–K) growth mode. Furthermore, the dot density is modulated sinusoidally with a periodicity commensurate with that of the interference, which suggests that the placement of QDs can be controlled on the scale of the optical wavelength used.