C-V Calculations in CdS/CdTe Thin Films Solar Cells with a CdSxTe1-x Interlayer

International Journal of Photoenergy. Volume 2013 (2013), Article ID 513217, 4 pages.

A. Gonzalez-Cisneros, F. L. Castillo-Alvarado, J. Ortiz-Lopez, and G. Contreras-Puente.   Escuela Superior de Física y Matemáticas-IPN, Edificio 9 U.P.A.L.M., 07738 México, DF, Mexico.

Abstract

In CdS/CdTe solar cells, chemical inter-diffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.

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